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Charge-Coupled Device (CCD) Adaptive Discrete Analog Signal Processing., , , , и . IEEE Trans. Commun., 27 (2): 390-405 (1979)Parameter extraction of a two-compartment model for whole-cell data analysis, и . Journal of Neuroscience Methods, 120 (2): 131--143 (октября 2002)Investigation of different screening methods on threshold voltage and gate oxide lifetime of SiC Power MOSFETs., , , , , , , , и . IRPS, стр. 1-7. IEEE, (2023)Simulation of biological ion channels with technology computer-aided design, , и . Computer Methods and Programs in Biomedicine, 85 (1): 1--7 (января 2007)Some important properties of synchronous oscillators., и . Proc. IEEE, 74 (3): 516-518 (1986)Design Strategies for Rugged SiC Power Devices., , , , , , и . IRPS, стр. 1-5. IEEE, (2019)Experimental Determination of Interface Trap Density and Fixed Positive Oxide Charge in Commercial 4H-SiC Power MOSFETs., , и . IEEE Access, (2021)Planar MEMS bio-chip for recording ion-channel currents in biological cells, , и . Smart Materials, Structures, and Systems, (октября 2003)Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs., , , , , , , , , и 1 other автор(ы). IRPS, стр. 1-5. IEEE, (2023)SPICE Modeling and CMOS Circuit Development of a SiC Power IC Technology., , , , , , , , , и . MWSCAS, стр. 966-969. IEEE, (2021)