Author of the publication

GaN double heterostructures

O. Husberg, A. Khartchenko, D. As, H. Vogelsang, T. Frey, D. Schikora, K. Lischka, O. Noriega, A. Tabata, and J. Leite. Appl. Phys. Lett., 79 (9): 1243-1245 (2001)
DOI: 10.1063/1.1396314

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R J Backlund

R. J. McLure

Ventura Leite

Arne R J Schneider

J R C Cousland

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Behavior of the electron-hole gas in quantum wells in GaAs--Al$_x$Ga$_1-x$As heterostructures under in-plane magnetic fieldsG. Oliveira, V. Gomes, A. Chaves, J. Leite, and J. Worlock. Physical Review B, (1987)Evidence of phase separation in cubic In$_x$Ga_$1-x$N epitaxial layers by resonant Raman scatteringE. Silveira, A. Tabata, J. Leite, R. Trentin, V. Lemos, T. Frey, D. As, D. Schikora, and K. Lischka. Applied Physics Letters, 75 (23): 3602-3604 (1999)Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3mum.M. da Silva, S. Martini, T. Lamas, A. Quivy, E. da Silva, and J. Leite. Microelectron. J., 34 (5-8): 631-633 (2003)H-band emission in single heterojunctions.F. Qu, A. Lino, N. Dantas, P. de Morais, E. da Silva, A. Quivy, and J. Leite. Microelectron. J., 34 (5-8): 755-757 (2003)Theoretical study of strain-induced ordering in cubic $In_xGa_1-xN$ epitaxial layersL. Teles, L. Ferreira, L. Scolfaro, and J. Leite. Phys. Rev. B, 69 (24): 245317 (June 2004)The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot.H. Rodríguez-Coppola, J. Tutor-Sánchez, J. Leite, L. Scolfaro, and F. García-Moliner. Microelectron. J., 35 (2): 103-110 (2004)Morphological and optical properties of p-type GaAs(001) layers doped with silicon.T. Lamas, S. Martini, M. da Silva, A. Quivy, and J. Leite. Microelectron. J., 34 (5-8): 701-703 (2003)Evolution of the two-dimensional towards three-dimensional Landau states in wide parabolic quantum well.C. Sergio, G. Gusev, A. Quivy, T. Lamas, J. Leite, O. Estibals, and J. Portal. Microelectron. J., 34 (5-8): 763-766 (2003)Coupled rate equation modeling of self-assembled quantum dot photoluminescence.F. de Sales, J. Cruz, S. da Silva, M. Soler, P. de Morais, M. da Silva, A. Quivy, and J. Leite. Microelectron. J., 34 (5-8): 705-707 (2003)Confined excitons in Si/SrTiO3 quantum wells.T. da Silva Pereira, J. de King Freire, V. Freire, G. de Aquino Farias, L. Scolfaro, J. Leite, and E. da Silva Júnior. Microelectron. J., 34 (5-8): 507-509 (2003)

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Disambiguation of "Leite, J. R."

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Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures

Please choose a person to relate this publication to

R J Backlund

R. J. McLure

Ventura Leite

Arne R J Schneider

J R C Cousland

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Leite, J. R."

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures

Please choose a person to relate this publication to

R J Backlund

R. J. McLure

Ventura Leite

Arne R J Schneider

J R C Cousland

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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Photoluminescence from quantum dots in cubic GaN/InGaN/GaN double heterostructures